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STGWA80H65FBAG Datasheet IGBT

Manufacturer: STMicroelectronics

Overview: STGWA80H65FBAG Datasheet Automotive-grade trench gate field-stop 650 V, 80 A high speed HB series IGBT in a TO-247 long leads TO-247 long leads C(2,.

General Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter.

Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Key Features

  • AEC-Q101 qualified.
  • Maximum junction temperature: TJ = 175 °C.
  • High-speed switching series.
  • Minimized tail current.
  • VCE(sat) = 1.65 V (typ. ) @ IC = 80 A.
  • Tight parameters distribution.
  • Safer paralleling.
  • Low thermal resistance.

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