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STGWT60H60DLFB - Trench gate field-stop IGBT

This page provides the datasheet information for the STGWT60H60DLFB, a member of the STGW60H60DLFB Trench gate field-stop IGBT family.

Description

This device is an IGBT developed using an advanced proprietary trench gate and field stop structure.

The device is part of the new "HB" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter.

Features

  • Maximum junction temperature: TJ = 175 °C.
  • High speed switching series.
  • Minimized tail current.
  • VCE(sat) = 1.6 V (typ. ) @ IC = 60 A.
  • Tight parameters distribution.
  • Safe paralleling.
  • Low thermal resistance.
  • Low VF soft recovery co-packaged diode.
  • Lead free package Figure 1. Internal schematic diagram C (2 or TAB).

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Datasheet preview – STGWT60H60DLFB

Datasheet Details

Part number STGWT60H60DLFB
Manufacturer STMicroelectronics
File Size 828.95 KB
Description Trench gate field-stop IGBT
Datasheet download datasheet STGWT60H60DLFB Datasheet
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STGW60H60DLFB STGWT60H60DLFB Trench gate field-stop IGBT, HB series 600 V, 60 A high speed Datasheet - production data TAB 3 2 1 TO-247 TO-3P 3 2 1 Features • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • VCE(sat) = 1.6 V (typ.) @ IC = 60 A • Tight parameters distribution • Safe paralleling • Low thermal resistance • Low VF soft recovery co-packaged diode • Lead free package Figure 1. Internal schematic diagram C (2 or TAB) Applications • Induction heating • Microwave oven • Resonant converters G (1) E (3) Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure.
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