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STGWT60H65DFB - Trench gate field-stop IGBT

This page provides the datasheet information for the STGWT60H65DFB, a member of the STGW60H65DFB Trench gate field-stop IGBT family.

Description

These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure.

These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter.

Features

  • Maximum junction temperature: TJ = 175 °C.
  • High speed switching series.
  • Minimized tail current.
  • Low saturation voltage: VCE(sat) = 1.6 V (typ. ) @ IC = 60 A.
  • Tight parameter distribution.
  • Safe paralleling.
  • Positive VCE(sat) temperature coefficient.
  • Low thermal resistance.
  • Very fast soft recovery antiparallel diode.

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Datasheet preview – STGWT60H65DFB

Datasheet Details

Part number STGWT60H65DFB
Manufacturer STMicroelectronics
File Size 685.37 KB
Description Trench gate field-stop IGBT
Datasheet download datasheet STGWT60H65DFB Datasheet
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Full PDF Text Transcription

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STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB Datasheet Trench gate field-stop 650 V, 60 A high speed HB series IGBT 3 2 1 TO-247 TAB 3 2 1 TO-247 long leads 3 2 1 TO-3P Features • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 60 A • Tight parameter distribution • Safe paralleling • Positive VCE(sat) temperature coefficient • Low thermal resistance • Very fast soft recovery antiparallel diode Applications • Photovoltaic inverters • High-frequency converters Description These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure.
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