STGWT60H65DFB igbt equivalent, trench gate field-stop igbt.
* Maximum junction temperature: TJ = 175 °C
* High speed switching series
* Minimized tail current
* Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC .
* Photovoltaic inverters
* High-frequency converters
Description
These devices are IGBTs developed using an adva.
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