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STGWT60H65F - 650 V field stop trench gate IGBT

Download the STGWT60H65F datasheet PDF. This datasheet also covers the STGW60H65F variant, as both devices belong to the same 650 v field stop trench gate igbt family and are provided as variant models within a single manufacturer datasheet.

General Description

Using advanced proprietary trench gate and field stop structure, this IGBT leads to an optimized compromise between conduction and switching losses maximizing the efficiency for high switching frequency converters.

Key Features

  • High speed switching Tight parameter distribution Safe paralleling Low thermal resistance 6 µs short-circuit withstand time Lead free package TO-247 2 1 3 1 3 2.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STGW60H65F-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Other Datasheets by STMicroelectronics

Part Number Description
STGWT60H65FB Trench gate field-stop IGBT
STGWT60H65DFB Trench gate field-stop IGBT
STGWT60H60DLFB Trench gate field-stop IGBT
STGWT60V60DF Trench gate field-stop IGBT
STGWT15H60F Trench gate field-stop IGBT
STGWT20H60DF 600V 20A high speed trench gate field-stop IGBT
STGWT20H65FB IGBT
STGWT20V60DF 600V 20A very high speed trench gate field-stop IGBT
STGWT20V60F IGBT
STGWT30H60DFB 30A high speed HB series IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STGW60H65F STGWT60H65F 60 A, 650 V field stop trench gate IGBT Datasheet − production data Features ■ ■ ■ ■ ■ ■ High speed switching Tight parameter distribution Safe paralleling Low thermal resistance 6 µs short-circuit withstand time Lead free package TO-247 2 1 3 1 3 2 Applications ■ ■ ■ ■ ■ TO-3P Photovoltaic inverters Uninterruptible power supply Welding Power factor correction High switching frequency converters Figure 1. Internal schematic diagram Description Using advanced proprietary trench gate and field stop structure, this IGBT leads to an optimized compromise between conduction and switching losses maximizing the efficiency for high switching frequency converters.