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STH310N10F7-2 Datasheet N-CHANNEL Power MOSFET

Manufacturer: STMicroelectronics

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General Description

th These devices utilize the 7 generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.

The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

Order codes STH310N10F7-2 STH310N10F7-6 Table 1.

Overview

STH310N10F7-2, STH310N10F7-6 N-channel 100 V, 1.9 mΩ typ., 180 A STripFET™ VII DeepGATE™ 22 Power MOSFET in H PAK-2 and H PAK-6 packages Datasheet - production.

Key Features

  • TAB 2 3 1 H2PAK-2 TAB 1 H2PAK-6 7 Figure 1. Internal schematic diagram Order codes VDS RDS(on) max. ID STH310N10F7-2 100 V STH310N10F7-6 2.3 mΩ 180 A.
  • Ultra low on-resistance.
  • 100% avalanche tested.

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