STL4N10F7 mosfet equivalent, n-channel power mosfet.
Order code
VDS
STL4N10F7
100 V
* Excellent FoM (figure of merit)
* Low Crss/Ciss ration for EMI immunity
* High avalanche ruggedness
RDS(on) max. 70 mΩ
.
* Switching applications
Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced .
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
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