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STL4N10F7 - N-CHANNEL POWER MOSFET

Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Features

  • Order code VDS STL4N10F7 100 V.
  • Excellent FoM (figure of merit).
  • Low Crss/Ciss ration for EMI immunity.
  • High avalanche ruggedness RDS(on) max. 70 mΩ ID 4.5 A.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STL4N10F7 Datasheet N-channel 100 V, 62 mΩ typ., 4.5 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 3.3x3.3 package D(5, 6, 7, 8) G(4) S(1, 2, 3) 8 76 5 1234 AM15810v1 Features Order code VDS STL4N10F7 100 V • Excellent FoM (figure of merit) • Low Crss/Ciss ration for EMI immunity • High avalanche ruggedness RDS(on) max. 70 mΩ ID 4.5 A Applications • Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Maturity status link STL4N10F7 Device summary Order code STL4N10F7 Marking 4N1F7 Package PowerFLAT™ 3.3x3.
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