STL4N10F7
Overview
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Maturity status link STL4N10F7.
- Excellent FoM (figure of merit)
- Low Crss/Ciss ration for EMI immunity
- High avalanche ruggedness RDS(on) max. 70 mΩ ID 4.5 A
