STL4N10F7
Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Maturity status link STL4N10F7 Device summary Order code STL4N10F7 Marking 4N1F7 Package PowerFLAT™ 3.3x3.3 Packing Tape and reel DS9354 - Rev 5 - February 2018 For further information contact your local STMicroelectronics sales office.
Key Features
- Excellent FoM (figure of merit)
- Low Crss/Ciss ration for EMI immunity
- High avalanche ruggedness RDS(on) max. 70 mΩ ID 4.5 A
