STL4N10F7 Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. .st./Power Transistors 1 Εlectrical ratings Table.
STL4N10F7 Key Features
- Excellent FoM (figure of merit)
- Low Crss/Ciss ration for EMI immunity
- High avalanche ruggedness