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STL66N3LLH5 - N-channel Power MOSFET

General Description

This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™ H5 technology.

The device has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class.

Key Features

  • Order code STL66N3LLH5 VDS 30 V RDS(on) max. 5.8 mΩ ID 80 A.
  • Designed for automotive.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STL66N3LLH5 Automotive-grade dual N-channel 30 V, 4.5 mΩ typ., 80 A STripFET™ H5 Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Figure 1: Internal schematic diagram Features Order code STL66N3LLH5 VDS 30 V RDS(on) max. 5.8 mΩ ID 80 A  Designed for automotive applications and AEC-Q101 qualified  Low on-resistance RDS(on)  High avalanche ruggedness  Low gate drive power loss  Wettable flank package Applications  Switching applications  Automotive Description This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™ H5 technology. The device has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class.