STL62P3LLH6 Description
This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Device summary Marking Package 62P3LLH6 PowerFLATTM 5x6 Packing Tape and reel October 2016 DocID025836 Rev 6 This is information on a product in full production.
STL62P3LLH6 Key Features
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss