Datasheet4U Logo Datasheet4U.com

STL64N4F7AG - Power MOSFET

Datasheet Summary

Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Features

  • Order code VDS RDS(on) max. ID STL64N4F7AG 40 V 8.5 mΩ 64 A 4 3 2 1.
  • AEC-Q101 qualified PowerFLAT™ 5x6.
  • Among the lowest RDS(on) on the market.
  • Excellent FoM (figure of merit) D(5, 6, 7, 8) 8 76 5.
  • Low Crss/Ciss ratio for EMI immunity.
  • High avalanche ruggedness.
  • Wettable flank package G(4).

📥 Download Datasheet

Datasheet preview – STL64N4F7AG

📁 Similar Datasheet

  • STL60N32N3LL - Power MOSFETs (ST Microelectronics)
  • STL60NH3LL - N-CHANNEL POWER MOSFET (ST Microelectronics)
  • STL6118 - Fast Enable with Low Noise LDO (Semtron)
  • STL6118A - 300mA Low Dropout Low Noise LDO (Semtron)
  • STL6119 - Fast Transient Response LDO (Semtron)
  • STL6120E - 500mA Adjustable & Fixed Voltage Linear LDO (Semtron)
  • STL6121 - 300mA Linear Regulator With Fast Enable and Solf Start (Semtron)
  • STL6340 - 250mA Low Quiescent Current Linear Regulator (Semtron)
  • STL6341 - 100mA Ultra Low Quiescent Current Linear Regulator (Semtron)
  • STL6342 - 250mA Low Quiescent Current Linear Regulator (Semtron)
Other Datasheets by STMicroelectronics

Full PDF Text Transcription

Click to expand full text
STL64N4F7AG Datasheet Automotive-grade 40 V, 7.0 mΩ typ., 64 A, STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package Features Order code VDS RDS(on) max. ID STL64N4F7AG 40 V 8.5 mΩ 64 A 4 3 2 1 • AEC-Q101 qualified PowerFLAT™ 5x6 • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) D(5, 6, 7, 8) 8 76 5 • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness • Wettable flank package G(4) Applications • Switching applications S(1, 2, 3) 12 34 Top View NG4D5678S123 Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Published: |