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STL60N10F7 - N-CHANNEL POWER MOSFET

Datasheet Summary

Description

This device is an N-channel Power MOSFET developed using the 7th generation of STripFET™ DeepGATE™ technology, with a new gate structure.

The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

Table 1.

Features

  • 1 2 3 4 PowerFLAT™ 5x6 Figure 1. Internal schematic diagram $    Order code STL60N10F7 VDS 100 V RDS(on) max ID PTOT 0.018 Ω 12 A 5 W.
  • Ultra low on-resistance.
  • 100% avalanche tested.

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Datasheet preview – STL60N10F7

Datasheet Details

Part number STL60N10F7
Manufacturer STMicroelectronics
File Size 1.22 MB
Description N-CHANNEL POWER MOSFET
Datasheet download datasheet STL60N10F7 Datasheet
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Full PDF Text Transcription

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STL60N10F7 N-channel 100 V, 0.0145 Ω typ., 12 A, STripFET™ VII DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Features 1 2 3 4 PowerFLAT™ 5x6 Figure 1. Internal schematic diagram $    Order code STL60N10F7 VDS 100 V RDS(on) max ID PTOT 0.018 Ω 12 A 5 W • Ultra low on-resistance • 100% avalanche tested Applications • Switching applications Description This device is an N-channel Power MOSFET developed using the 7th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. ' 3   !-V Order code STL60N10F7 Table 1.
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