STL60N10F7
STL60N10F7 is N-CHANNEL POWER MOSFET manufactured by STMicroelectronics.
N-channel 100 V, 0.0145 Ω typ., 12 A, STrip FET™ VII Deep GATE™ Power MOSFET in a Power FLAT™ 5x6 package
- production data
Features
1 2 3 4
Power FLAT™ 5x6
Figure 1. Internal schematic diagram $
Order code STL60N10F7
VDS 100 V
RDS(on) max
PTOT
0.018 Ω 12 A 5 W
- Ultra low on-resistance
- 100% avalanche tested
Applications
- Switching applications
Description
This device is an N-channel Power MOSFET developed using the 7th generation of STrip FET™ Deep GATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
'
3
!-V
Order code STL60N10F7
Table 1. Device summary
Marking
Package
60N10F7
Power FLAT™ 5x6
Packaging Tape and reel
October 2013
This is information on a product in full production.
Doc ID024453 Rev...
