STL65DN3LLH5 Datasheet | STMicroelectronics

Dual N-channel 30 V, 0.0059 Ω, 19 A Power FLAT™(5x6) double island, STrip FET™ V Power MOSFET Features Type STL65DN3LLH5 VDSS 30 V RDS(on) max <0.0065 Ω ID 19 A (1) 1. The value is rated according Rthj-pcb - RDS(on) - Qg industry benchmark - Extremely low on-resistance RDS(on) - Very low switching gate charge - High avalanche ruggedness - Low gate drive power losses Application Switching applications Description This product utilizes the 5th generation of design rules of ST’s proprietary STrip FET™ technology. The lowest available RDS(on)- Qg, in this chip scale package, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved. Power FLAT™ (5x6) Double island Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking 65DN3LLH5 Package Power FLAT™(5x6) Double island Packaging Tape and reel December 2010 Doc ID 18323 Rev...