STL64DN4F7AG Datasheet | STMicroelectronics

Automotive-grade dual N-channel, 40 V, 7.0 mΩ typ., 40 A, STrip FET™ F7 Power MOSFET in a Power FLAT™ 5x6 double island package Features Order code STL64DN4F7AG VDS 40 V RDS(on) max. 8.5 mΩ ID 40 A 1 S2 Drain on rear side 2 G2 3 S1 4 G1 8 D2 6 D1 - AEC-Q101 qualified - Among the lowest RDS(on) on the market - Excellent Fo M (figure of merit) - Low Crss/Ciss ratio for EMI immunity - High avalanche ruggedness - Wettable flank package Applications - Switching applications Description This N-channel Power MOSFET utilizes STrip FET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. NG14G22D1D2RSS13S21 Product status link Product summary Order code Marking 64DN4F7 Package...