Datasheet4U Logo Datasheet4U.com

STL60P4LLF6 - P-CHANNEL POWER MOSFET

General Description

This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure.

The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Key Features

  • Order code VDS STL60P4LLF6 40 V.
  • Very low on-resistance.
  • Very low gate charge.
  • High avalanche ruggedness.
  • Low gate drive power loss RDS(on) max. 14 mΩ ID 60 A.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STL60N32N3LL Power MOSFETs ST Microelectronics
STL60NH3LL N-CHANNEL POWER MOSFET ST Microelectronics
STL6118 Fast Enable with Low Noise LDO Semtron
STL6118A 300mA Low Dropout Low Noise LDO Semtron
STL6119 Fast Transient Response LDO Semtron

Other Datasheets by STMicroelectronics

Part Number Description
STL60N10F7 N-CHANNEL POWER MOSFET
STL62P3LLH6 P-CHANNEL POWER MOSFET
STL64DN4F7AG Automotive-grade dual N-channel Power MOSFET
STL64N4F7AG Power MOSFET
STL65DN3LLH5 Dual N-channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STL60P4LLF6 Datasheet P-channel 40 V, 11.5 mΩ typ., 60 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 package PowerFLAT 5x6 D(5, 6, 7, 8) G(4) S(1, 2, 3) Features Order code VDS STL60P4LLF6 40 V • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss RDS(on) max. 14 mΩ ID 60 A Applications • Switching applications AM01475v4 Description This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.