STL60P4LLF6 Datasheet | STMicroelectronics

P-channel 40 V, 11.5 mΩ typ., 60 A STrip FET F6 Power MOSFET in a Power FLAT 5x6 package Power FLAT 5x6 D(5, 6, 7, 8) G(4) S(1, 2, 3) Features Order code 40 V - Very low on-resistance - Very low gate charge - High avalanche ruggedness - Low gate drive power loss RDS(on) max. 14 mΩ ID 60 A Applications - Switching applications AM01475v4 Description This device is a P-channel Power MOSFET developed using the STrip FET F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Product status link STL60P4LLF6 Product summary Order code Marking Package Packing 60P4LLF6 Power FLAT 5x6 Tape and reel Note: For the P-channel Power MOSFETs the actual polarity of the voltages and the current must be reversed. DS10066 - Rev 3 - February 2020 For further information contact your local STMicroelectronics sales office. .st. Electrical...