STL65N3LLH5 Datasheet | STMicroelectronics

N-channel 30 V, 0.0048 Ω , 19 A - Power FLAT™ (6x5) STrip FET™ V Power MOSFET Features .. Type VDSS 30 V RDS(on) max <0.0058 Ω ID 19 A (1) 1. The value is rated according Rthj-pcb - - - - - RDS(on) - Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge High avalanche ruggedness Low gate drive power losses Power FLAT™ ( 6x5 ) Application - Switching applications Figure 1. Internal schematic diagram Description This product utilizes the 5th generation of design rules of ST’s proprietary STrip FET™ technology. The lowest available RDS(on)- Qg, in this chip scale package, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved. Table 1. Device summary Marking 65N3LLH5 Package Power FLAT™ (6x5) Packaging Tape and reel Order code STL65N3LLH5 September 2008 Rev 4 1/12 .st. 12 Contents Contents...