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STL65N3LLH5 - N-channel Power MOSFET

General Description

This product utilizes the 5th generation of design rules of ST’s proprietary STripFET™ technology.

Qg, in this chip scale package, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved.

Table 1.

Key Features

  • www. DataSheet4U. com Type VDSS 30 V RDS(on) max.

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STL65N3LLH5 N-channel 30 V, 0.0048 Ω , 19 A - PowerFLAT™ (6x5) STripFET™ V Power MOSFET Features www.DataSheet4U.com Type VDSS 30 V RDS(on) max <0.0058 Ω ID 19 A (1) STL65N3LLH5 1. The value is rated according Rthj-pcb ■ ■ ■ ■ ■ RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge High avalanche ruggedness Low gate drive power losses PowerFLAT™ ( 6x5 ) Application ■ Switching applications Figure 1. Internal schematic diagram Description This product utilizes the 5th generation of design rules of ST’s proprietary STripFET™ technology. The lowest available RDS(on)*Qg, in this chip scale package, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved. Table 1.