STL86N3LLH6AG Key Features
- AEC-Q101 qualified
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
- Logic level
- Wettable flank package
- Part: STL86N3LLH6AG
- Manufacturer: STMicroelectronics (official site)
- Size: 620.10 KB
Related STMicroelectronics (official site) Datasheets
| Part Number | Description |
|---|---|
| STL80N75F6 | N-CHANNEL POWER MOSFET |
| STL85N6F3 | Power MOSFET |
| STL8DN10LF3 | Dual N-channel Power MOSFET |
| STL8DN6LF3 | Automotive-grade dual N-channel Power MOSFET |
| STL8DN6LF6AG | Automotive-grade dual N-channel MOSFET |
STL86N3LLH6AG Description
This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. 1 Electrical ratings Table.