TAB 3 2 1 TO-220 Order code STP110N55F6 VDS 55 V RDS(on) max. ID 5.2 mΩ 110 A
* Low gate charge
* Very low on-resistance
* High avalanche ruggedness App.

* Switching applications Figure 1. Internal schematic diagram '7$% Description This device is an N-channel Po.

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits a very low RDS(on) in all packages. * 6 $0Y Order code STP110N55F6 Table 1. D.

STP110N10F7

STP110N7F6

STP110N8F6

STP110N8F7

STP1117S12

STP1117S18

STP1117S25

STP1117S33

STP1117SA

STP11N60DM2

STP11N65M2

STP11N65M5

STP11NB40