STP180N4F6 Datasheet - STMicroelectronics

N-channel Power MOSFET

STP180N4F6 General Description

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Order code STP180N4F6 Table 1: Device summary Marking Package 180N4F6 TO-220 Packing Tube October 2016 .

STP180N4F6 Datasheet (557.23 KB)

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STP180N4F6

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STMicroelectronics ↗

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557.23 KB

Description:

N-channel power mosfet.
STP180N4F6 N-channel 40 V, 2.1 mΩ typ., 120 A STripFET™ F6 Power MOSFET in a TO-220 package Datasheet - production data Figure 1: Internal schematic.

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STP180N4F6 General Description

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