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STP180NS04ZC - N-channel Power MOSFET

General Description

This fully clamped Power MOSFET is manufactured using an advanced mesh overlay process which is based on an innovative strip layout.

Key Features

  • TAB 3 2 1 TO-220 Order code VDS RDS(on) max ID STP180NS04ZC 40 V clamped 4.2 mΩ 120 A.
  • Low capacitance and gate charge.
  • 100% avalanche tested.
  • 175 °C maximum junction temperature.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STP180NS04ZC N-channel 40 V clamped 3.6 mΩ typ., 120 A fully protected SAFeFET™ Power MOSFET in a TO-220 package Datasheet - production data Features TAB 3 2 1 TO-220 Order code VDS RDS(on) max ID STP180NS04ZC 40 V clamped 4.2 mΩ 120 A • Low capacitance and gate charge • 100% avalanche tested • 175 °C maximum junction temperature Applications • Switching and linear applications Figure 1. Internal schematic diagram D(2,TAB) G(1) Description This fully clamped Power MOSFET is manufactured using an advanced mesh overlay process which is based on an innovative strip layout.