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STP180N4F6 - N-channel Power MOSFET

General Description

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure.

The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Key Features

  • Order code VDS RDS(on) max. ID PTOT STP180N4F6 40 V 2.7 mΩ 120 A 190 W.
  • Very low on-resistance.
  • Very low gate charge.
  • High avalanche ruggedness.
  • Low gate drive power loss.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STP180N4F6 N-channel 40 V, 2.1 mΩ typ., 120 A STripFET™ F6 Power MOSFET in a TO-220 package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max. ID PTOT STP180N4F6 40 V 2.7 mΩ 120 A 190 W  Very low on-resistance  Very low gate charge  High avalanche ruggedness  Low gate drive power loss Applications  Switching applications  Power tools Description This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Order code STP180N4F6 Table 1: Device summary Marking Package 180N4F6 TO-220 Packing Tube October 2016 DocID028221 Rev 2 This is information on a product in full production. 1/13 www.st.