Datasheet Summary
N-channel 40 V, 2.1 mΩ typ., 120 A STripFET™ F6 Power MOSFET in a TO-220 package
- production data
Figure 1: Internal schematic diagram
Features
Order code VDS RDS(on) max.
PTOT
STP180N4F6 40 V 2.7 mΩ 120 A 190 W
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
Applications
- Switching applications
- Power tools
Description
This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
Order code STP180N4F6
Table 1: Device summary
Marking
Package
180N4F6
TO-220
Packing...