Datasheet4U Logo Datasheet4U.com

STP180N55F3 - N-CHANNEL MOSFET

General Description

so STMicroelectronics unique “single feature size™” b strip-based process with less critical alignment O steps and therefore a remarkable manufacturing - reproducibility.

Key Features

  • Type VDSS RDS(on) ID Pw STB180N55F3 55V ) STP180N55F3 55V 3.5mΩ 120A(1) 330W 3.8mΩ 120A(1) 330W t(s 1. Value limited by wire bonding uc.
  • Ultra low on-resistance d.
  • 100% avalanche tested Pro.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STP180N55 N-CHANNEL Power MOSFET ST Microelectronics
STP1806 N-Channel Power MOSFET ST Microelectronics
STP185N55 N-CHANNEL Power MOSFET ST Microelectronics
STP18N55M5 N-Channel MOSFET INCHANGE
STP18N65M5 N-Channel MOSFET INCHANGE

Other Datasheets by STMicroelectronics

Part Number Description
STP180N10F3 N-CHANNEL POWER MOSFET
STP180N4F6 N-channel Power MOSFET
STP180NS04ZC N-channel Power MOSFET
STP185N55F3 N-CHANNEL POWER MOSFET
STP18N55M5 N-channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STB180N55F3 STP180N55F3 N-channel 55V - 3.2mΩ - 120A - D2PAK/TO-220 STripFET™ Power MOSFET Features Type VDSS RDS(on) ID Pw STB180N55F3 55V ) STP180N55F3 55V 3.5mΩ 120A(1) 330W 3.8mΩ 120A(1) 330W t(s 1. Value limited by wire bonding uc ■ Ultra low on-resistance d ■ 100% avalanche tested Pro Description lete This n-channel enhancement mode Power MOSFET is the latest refinement of so STMicroelectronics unique “single feature size™” b strip-based process with less critical alignment O steps and therefore a remarkable manufacturing - reproducibility. The resulting transistor shows ) extremely high packing density for low on t(s resistance, rugged avalanche characteristics and c low gate charge.