Datasheet Summary
STB180N55F3 STP180N55F3
N-channel 55V
- 3.2mΩ
- 120A
- D2PAK/TO-220 STripFET™ Power MOSFET
Features
Type
VDSS RDS(on)
Pw
STB180N55F3 55V
) STP180N55F3 55V
3.5mΩ 120A(1) 330W 3.8mΩ 120A(1) 330W t(s 1. Value limited by wire bonding uc
- Ultra low on-resistance d
- 100% avalanche tested
Pro Description lete This n-channel enhancement mode Power
MOSFET is the latest refinement of so STMicroelectronics unique “single feature size™” b strip-based process with less critical alignment O steps and therefore a remarkable manufacturing
- reproducibility. The resulting transistor shows ) extremely high packing density for low on t(s resistance, rugged avalanche characteristics and c low...