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STP180N10F3 - N-CHANNEL POWER MOSFET

General Description

This device is an N-channel enhancement mode Power MOSFET produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize onresistance and gate charge to provide superior switching performance.

Figure 1.

Key Features

  • Order codes VDSS STP180N10F3 100 V.
  • Ultra low on-resistance.
  • 100% avalanche tested RDS(on) max. 5.1 mΩ ID 120 A.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STP180N10F3 N-channel 100 V, 4.5 mΩ, 120 A STripFET™III Power MOSFET TO-220 Features Order codes VDSS STP180N10F3 100 V ■ Ultra low on-resistance ■ 100% avalanche tested RDS(on) max. 5.1 mΩ ID 120 A Applications ■ High current switching applications Description This device is an N-channel enhancement mode Power MOSFET produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize onresistance and gate charge to provide superior switching performance. TAB 3 2 1 TO-220 Figure 1. Internal schematic diagram $ 4!" ' Table 1. Device summary Order codes STP180N10F3 Marking 180N10F3 3 !-V Package TO-220 Packaging Tube July 2011 Doc ID 14933 Rev 4 1/13 www.st.com 13 Contents Contents STP180N10F3 1 Electrical ratings .