Datasheet Summary
N-channel 100 V, 4.5 mΩ, 120 A STripFET™III Power MOSFET TO-220
Features
Order codes
VDSS
STP180N10F3 100 V
- Ultra low on-resistance
- 100% avalanche tested
RDS(on) max.
5.1 mΩ
ID 120 A
Applications
- High current switching applications
Description
This device is an N-channel enhancement mode Power MOSFET produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize onresistance and gate charge to provide superior switching performance.
3 2 1
TO-220
Figure 1. Internal schematic diagram
$4!"
'
Table 1. Device summary Order codes STP180N10F3
Marking 180N10F3
3
!-V
Package TO-220
Packaging Tube
July...