STP180N10F3 Description
This device is an N-channel enhancement mode Power MOSFET produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize onresistance and gate charge to provide superior switching performance. TAB 3 2 1 TO-220 Figure 1. Internal schematic diagram $ 4!" ' Table.
STP180N10F3 Key Features
- Ultra low on-resistance
- 100% avalanche tested