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STMicroelectronics Electronic Components Datasheet

STP3NA80 Datasheet

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

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STP4NA80
STP4NA80FI
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
TYPE
ST P 4NA 80
ST P 4NA 80 F I
VDSS
800 V
800 V
R DS( on)
<3
<3
ID
4A
2.5 A
s TYPICAL RDS(on) = 2.4
s ± 30V GATE TO SOURCE VOLTAGE RATING
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s LOW INTRINSIC CAPACITANCES
s GATE GHARGE MINIMIZED
s REDUCED THRESHOLD VOLTAGE SPREAD
DESCRIPTION
This series of POWER MOSFETS represents the
most advanced high voltage technology. The
optimized cell layout coupled with a new
proprietary edge termination concur to give the
device low RDS(on) and gate charge, unequalled
ruggedness and superior switching performance.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
P ar amete r
VD S Drain-source Voltage (VGS = 0)
VDG R Drain-gate Voltage (RG S = 20 k)
VGS
mID
.coID
ID M()
t4UPtot
Gate-source Voltage
Drain Current (continuous) at T c = 25 oC
Drain Current (continuous) at T c = 100 oC
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
eDerating Factor
eVISO Insulation Withstand Voltage (DC)
ShTstg Storage Temperature
taTj Max. Operating Junction Temperature
a() Pulse width limited by safe operating area
www.DFebruary 1994
3
2
1
TO-220
3
2
1
ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
Val ue
STP4NA80
STP4NA80FI
800
800
± 30
4 2.5
2.5 1.6
16 16
110 45
0. 88
0. 36
2000
-65 to 150
150
Unit
V
V
V
A
A
A
W
W/oC
V
oC
oC
1/10


STMicroelectronics Electronic Components Datasheet

STP3NA80 Datasheet

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

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STP4NA80/FI
THERMAL DATA
Rthj-case
Rthj- amb
Rt hc- sin k
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
TO-220
1. 13
ISOWATT220
2. 77
6 2. 5
0. 5
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symb ol
IA R
EAS
EAR
IA R
Pa ra met er
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy
(st arting Tj = 25 oC, ID = IAR, VD D = 50 V)
Repetitive Avalanche Energy
(pulse width limited by Tj max, δ < 1%)
Avalanche Current, Repetitive or Not-Repetitive
(Tc = 100 oC, pulse width limited by Tj max, δ < 1%)
Max Value
4
80
3.1
2.5
Unit
A
mJ
mJ
A
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symb ol
Parameter
Test Conditions
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA VG S = 0
IDSS
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating x 0.8 Tc = 125 oC
IG SS
Gate-body Leakage
Current (VD S = 0)
VGS = ± 30 V
Min.
800
Typ.
Max.
Unit
V
250
1000
± 100
µA
µA
nA
ON ()
Symb ol
VG S(th)
RDS(on)
ID(on)
Parameter
Test Conditions
Gate Threshold Voltage VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10V ID = 2 A
R esist anc e
VGS = 10V ID = 2 A Tc = 100oC
On St ate Drain Current VDS > ID( on) x RD S(on) max
VGS = 10 V
Min.
2. 25
4
Typ.
3
2.4
Max.
3. 75
3
6
Unit
V
A
DYNAMIC
mSymb o l
.cogfs ()
t4UCiss
Coss
eeCrss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
www.DataSh2/10
Test Conditions
VDS > ID( on) x RD S(on) max ID = 2 A
VDS = 25 V f = 1 MHz VG S = 0
Min.
2.5
Typ.
4.3
Max.
Unit
S
955 1350
105 150
24 35
pF
pF
pF


Part Number STP3NA80
Description N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
Maker ST Microelectronics
Total Page 10 Pages
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