STP77N6F6 Datasheet, STMicroelectronics

Order code VDS RDS(on) max ID PTOT STP77N6F6 60 V 7.9 mΩ (VGS=10 V) 77 A 80 W
* RDS(on) * Qg industry benchmark
* Extremely low on-resistance RDS(on)
* H.

* Switching applications Description This device is an N-channel Power MOSFET developed using the 6th generation of.

This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. TAB 3 2 1 TO-220 Figure 1. Internal sch.