STPSC406 Overview
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating.
| Part number | STPSC406 |
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| Datasheet | STPSC406_STMicroelectronics.pdf |
| File Size | 124.19 KB |
| Manufacturer | STMicroelectronics |
| Description | 600V power Schottky silicon carbide diode |
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The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating.
See all STMicroelectronics datasheets
| Part Number | Description |
|---|---|
| STPSC1006 | Schottky silicon carbide diode |
| STPSC1206 | 600V power Schottky silicon carbide diode |
| STPSC606 | Schottky Barrier 600 V power Schottky silicon carbide diode |
| STPSC806 | Schottky Barrier 600 V power Schottky silicon carbide diode |
| STPS0520M | LOW DROP POWER SCHOTTKY RECTIFIER |
| STPS0520Z | SCHOTTKY RECTIFIERS |
| STPS0530Z | SCHOTTKY RECTIFIERS |
| STPS0540Z | (STPS0540Z / STPS0560Z) SCHOTTKY RECTIFIER |
| STPS0560Z | SCHOTTKY RECTIFIER |
| STPS1045B | POWER SCHOTTKY RECTIFIER |