STPSC606
STPSC606 is Schottky Barrier 600 V power Schottky silicon carbide diode manufactured by STMicroelectronics.
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600 V power Schottky silicon carbide diode
Features
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- No or negligible reverse recovery Switching behavior independent of temperature Dedicated to PFC boost diode
Description
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. ST SiC diodes will boost the performance of PFC operations in hard switching conditions.
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