STPSC406 Description
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating.
- Part: STPSC406
- Manufacturer: STMicroelectronics
- Size: 124.19 KB
Related STMicroelectronics Datasheets
| Part Number | Description |
|---|---|
| STPSC1006 | Schottky silicon carbide diode |
| STPSC1206 | 600V power Schottky silicon carbide diode |
| STPSC606 | Schottky Barrier 600 V power Schottky silicon carbide diode |
| STPSC806 | Schottky Barrier 600 V power Schottky silicon carbide diode |
| STPS0520M | LOW DROP POWER SCHOTTKY RECTIFIER |