| Part number | STPSC40H12C-Y |
|---|---|
| Datasheet | STPSC40H12C-Y-STMicroelectronics.pdf |
| File Size | 251.25 KB |
| Manufacturer | STMicroelectronics |
| Description | power Schottky silicon carbide diode |
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The SiC diode, available in TO-247, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating.
See all STMicroelectronics datasheets
| Part Number | Description |
|---|---|
| STPSC40H12C | 40A power Schottky silicon carbide diode |
| STPSC4H065 | 4A high surge silicon carbide power Schottky diode |
| STPSC4H065DLF | 650V power Schottky silicon carbide diode |
| STPSC10065 | Schottky silicon carbide diode |
| STPSC10065DLF | power Schottky silicon carbide diode |
| STPSC1006D | 600 V power Schottky silicon carbide diode |
| STPSC10H065 | power Schottky silicon carbide diode |
| STPSC10H065-Y | Automotive 650V power Schottky silicon carbide diode |
| STPSC10H065BY-TR | Schottky silicon carbide diode |
| STPSC10H065DLF | power Schottky silicon carbide diode |
