STMicroelectronics STPSC4H065
STPSC4H065 is especially suited for use in PFC applications. This ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.| Part No. | STPSC4H065 |
|---|---|
| Datasheet | STPSC4H065 Download |
| Manufacturer |  STMicroelectronics |
| Description | 4A high surge silicon carbide power Schottky diode |
| Buy | Stock & Price |
FEATURES
● No reverse recovery charge in application current range● Switching behavior independent of temperature
● High forward surge capability
● Insulated package TO-220AC Ins: – Insulated voltage: 2500 VRMS – Typical package capacitance: 7 pF
● Power efficient product
● ECOPACK®2 compliant component
APPLICATIONS
● Switch mode power supply● PFC
● DCDC converters
● LLC topologies
● Boost diode Product status STPSC4H065 Product summary Symbol Value IF(AV) 4A VRRM 650 V Tj(max.) 175 °C Product label
DESCRIPTION
This 4 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. This DS9222 - Rev 6 - January 2020 For further information contact your local STMicroelectronics sales office.
