STPSC4H065 Description
This 4 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.
STPSC4H065 Key Features
- No reverse recovery charge in application current range
- Switching behavior independent of temperature
- High forward surge capability
- Insulated package TO-220AC Ins
- Insulated voltage: 2500 VRMS
- Typical package capacitance: 7 pF
- Power efficient product
- ECOPACK®2 pliant ponent