Datasheet Details
| Part number | STPSC4H065 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 317.48 KB |
| Description | 4A high surge silicon carbide power Schottky diode |
| Datasheet | STPSC4H065-STMicroelectronics.pdf |
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Overview: STPSC4H065 Datasheet 650 V, 4 A high surge silicon carbide power Schottky diode TO-220AC DPAK TO-220AC ins.
| Part number | STPSC4H065 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 317.48 KB |
| Description | 4A high surge silicon carbide power Schottky diode |
| Datasheet | STPSC4H065-STMicroelectronics.pdf |
|
|
|
This 4 A, 650 V SiC diode is an ultrahigh performance power Schottky diode.
It is manufactured using a silicon carbide substrate.
The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.
| Part Number | Description |
|---|---|
| STPSC4H065DLF | 650V power Schottky silicon carbide diode |
| STPSC40H12C | 40A power Schottky silicon carbide diode |
| STPSC40H12C-Y | power Schottky silicon carbide diode |
| STPSC10065 | Schottky silicon carbide diode |
| STPSC10065DLF | power Schottky silicon carbide diode |
| STPSC1006D | 600 V power Schottky silicon carbide diode |
| STPSC10H065 | power Schottky silicon carbide diode |
| STPSC10H065-Y | Automotive 650V power Schottky silicon carbide diode |
| STPSC10H065BY-TR | Schottky silicon carbide diode |
| STPSC10H065DLF | power Schottky silicon carbide diode |