Datasheet Details
| Part number | STPSC4H065DLF |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 376.68 KB |
| Description | 650V power Schottky silicon carbide diode |
| Datasheet |
 STPSC4H065DLF Datasheet
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| Part number | STPSC4H065DLF |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 376.68 KB |
| Description | 650V power Schottky silicon carbide diode |
| Datasheet |
STPSC4H065DLF Datasheet
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This 4 A, 650 V, SiC diode is an ultra-high performance power Schottky diode.
It is manufactured using a silicon carbide substrate.
The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.