STPSC4H065DLF Datasheet 650V power Schottky silicon carbide diode

Manufacturer: STMicroelectronics

STPSC4H065DLF 650v power schottky silicon carbide diode by STMicroelectronics - Datasheet Preview

Datasheet Details

Part number	STPSC4H065DLF
Manufacturer	STMicroelectronics
File Size	376.68 KB
Description	650V power Schottky silicon carbide diode
Datasheet	STPSC4H065DLF Datasheet

General Description

This 4 A, 650 V, SiC diode is an ultra-high performance power Schottky diode.

It is manufactured using a silicon carbide substrate.

The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.

Overview

STPSC4H065DLF Datasheet 650 V power Schottky silicon carbide diode Product status link STPSC4H065DLF Product summary Symbol Value IF(AV) 4A VRRM 650 V VF(typ.) 1.38 V T j(max.

Key Features

Less than 1 mm height package.
High creepage package.
No or negligible reverse recovery.
Temperature independent switching behavior.
High forward surge capability.
Low drop forward voltage.
Power efficient product.
ECOPACK2 compliant component.

More Datasheets from STMicroelectronics

Part Number	Description
STPSC4H065	4A high surge silicon carbide power Schottky diode
STPSC40H12C	40A power Schottky silicon carbide diode
STPSC40H12C-Y	power Schottky silicon carbide diode
STPSC10065	Schottky silicon carbide diode
STPSC10065DLF	power Schottky silicon carbide diode
STPSC1006D	600 V power Schottky silicon carbide diode
STPSC10H065	power Schottky silicon carbide diode
STPSC10H065-Y	Automotive 650V power Schottky silicon carbide diode
STPSC10H065BY-TR	Schottky silicon carbide diode
STPSC10H065DLF	power Schottky silicon carbide diode