*
*
* No or negligible reverse recovery Switching behavior independent of temperature Dedicated to PFC boost diode K A K Description The SiC diode is an u.

NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENV.

The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no r.

STPSC6C065-Y

STPSC6H065

STPSC6H065DLF

STPSC6TH13TI

STPSC1006

STPSC10065

STPSC10065DLF

STPSC1006D

STPSC10H065

STPSC10H065-Y

STPSC10H065BY-TR

STPSC10H065DLF

STPSC10H065G2