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STPSC606 Datasheet Schottky Barrier 600 V power Schottky silicon carbide diode

Manufacturer: STMicroelectronics

Overview: www.DataSheet4U.com STPSC606 600 V power Schottky silicon carbide.

General Description

The SiC diode is an ultrahigh performance power Schottky diode.

It is manufactured using a silicon carbide substrate.

The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating.

Key Features

  • No or negligible reverse recovery Switching behavior independent of temperature Dedicated to PFC boost diode K A K.

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