STPSC8H065DLF diode equivalent, 650v power schottky silicon carbide diode.
* Less than 1 mm height package
* High creepage package
* No or negligible reverse recovery
* Temperature independent switching behavior
* High forwar.
* Switch mode power supply
* Boost PFC
* Bootstrap diode
* LLC clamping function
* High frequency in.
This 8 A, 650 V, SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky co.
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