STPSC8H065DLF Datasheet 650V power Schottky silicon carbide diode

Manufacturer: STMicroelectronics

STPSC8H065DLF 650v power schottky silicon carbide diode by STMicroelectronics - Datasheet Preview

Datasheet Details

Part number	STPSC8H065DLF
Manufacturer	STMicroelectronics
File Size	377.26 KB
Description	650V power Schottky silicon carbide diode
Datasheet	STPSC8H065DLF Datasheet

General Description

This 8 A, 650 V, SiC diode is an ultra-high performance power Schottky diode.

It is manufactured using a silicon carbide substrate.

The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.

Overview

STPSC8H065DLF Datasheet 650 V power Schottky silicon carbide diode Product status link STPSC8H065DLF Product summary Symbol Value IF(AV) 8A VRRM 650 V VF(typ.) 1.38 V T j(max.

Key Features

Less than 1 mm height package.
High creepage package.
No or negligible reverse recovery.
Temperature independent switching behavior.
High forward surge capability.
Low drop forward voltage.
Power efficient product.
ECOPACK2 compliant component.

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