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N-CHANNEL 600V - 7Ω - 0.4A TO-92 PowerMesh™II MOSFET
TYPE STQ1HNC60
s s s s s
STQ1HNC60
PRELIMINARY DATA
VDSS 600 V
RDS(on) <8Ω
ID 0.4 A
TYPICAL RDS(on) = 7 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED TO-92
DESCRIPTION Using the latest high voltage MESH OVERLAY™II process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
STQ1HNC60 Datasheet
