STQ2HNK60ZR-AP Datasheet, STMicroelectronics

Order codes VDS STQ2HNK60ZR-AP 600 V
* 100% avalanche tested
* Gate charge minimized
* Very low intrinsic capacitance
* Zener-protected RDS(on) max..

* Switching applications Description This high-voltage device is a Zener-protected N-channel Power MOSFET developed.

This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the wellestablished PowerMESH. In addition to a significant reduction in on-resistance, this devic.