STQ2HNK60ZR-AP - N-channel Power MOSFET

Product Overview

STMicroelectronics

Datasheet Details

Part number	STQ2HNK60ZR-AP
Manufacturer	STMicroelectronics
File Size	291.53 KB
Description	N-channel Power MOSFET
Datasheet	STQ2HNK60ZR-AP Datasheet
Additional preview pages of the STQ2HNK60ZR-AP datasheet.

Product details

Description

This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the wellestablished PowerMESH.

Features

Order codes VDS STQ2HNK60ZR-AP 600 V.
100% avalanche tested.
Gate charge minimized.
Very low intrinsic capacitance.
Zener-protected RDS(on) max. 4.8 Ω ID 500 mA.

📁 Similar Datasheet

STQ2016 - 700 MHz to 2500 MHz DIRECT QUADRATURE MODULATOR (RFMD)
STQ2016-3 - 700-2500 MHz Direct Quadrature Modulator (ETC)
STQ2016-3Z - 700-2500 MHz Direct Quadrature Modulator (ETC)
STQ2016Z - 700 MHz to 2500 MHz DIRECT QUADRATURE MODULATOR (RFMD)
STQ2NF06L - N-CHANNEL MOSFET (ST Microelectronics)
STQ2NK60ZR-AP - N-CHANNEL Power MOSFET (ST Microelectronics)
STQ-1016 - 250 - 1000 MHz Direct Quadrature Modulator (ETC)
STQ-1016Z - (STQ-x016Z) Reliability Qualification Report (ETC)

Other Datasheets by STMicroelectronics

STQ2LN60K3-AP - N-channel Power MOSFET
STQ1HN60K3-AP - N-CHANNEL MOSFET
STQ1HNK60R - N-CHANNEL MOSFET
STQ1HNK60R-AP - N-CHANNEL MOSFET
STQ1NK80ZR-AP - N-channel Power MOSFET
STQ3N45K3-AP - N-channel Power MOSFET

Published: Jun 26, 2023 |