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STMicroelectronics Electronic Components Datasheet

STU13NB60 Datasheet

N-channel Power MOSFET

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STU13NB60
N-CHANNEL ENHANCEMENT MODE
PowerMESHMOSFET
TYPE
V DSS
RDS(on)
ID
STU13NB60
600 V < 0.45 12.6 A
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s TYPICAL RDS(on) = 0.4
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
s ± 30V GATE TO SOURCE VOLTAGE RATING
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, SGS-Thomson has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
PRELIMINARY DATA
23
1
Max220
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Uni t
VDS
VDGR
VGS
ID
ID
IDM ( )
Ptot
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 k)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
Tot al Dissipation at Tc = 25 oC
Derating Factor
600
600
± 30
12.6
7.9
50.4
160
1.28
V
V
V
A
A
A
W
W/oC
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
4.5
-65 to 150
150
(1) ISD 13A, di/dt 200 A/µs, VDD V(BR)DSS, Tj TJMAX
V/ ns
oC
oC
October 1997
1/6
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.


STMicroelectronics Electronic Components Datasheet

STU13NB60 Datasheet

N-channel Power MOSFET

No Preview Available !

STU13NB60
THERMAL DATA
Rt hj-ca se
Rth j -a m b
Rthc- si nk
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
0.78
62.5
0.5
300
oC/ W
oC/W
oC/ W
oC
AVALANCHE CHARACTERISTICS
S ymb ol
IAR
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E AS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR , VDD = 50 V)
Max Valu e
12.6
800
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
S ymb ol
V(BR)DSS
IDSS
IGSS
P a ra m et er
Test Conditions
Dr ain- sou rc e
Breakdown Voltage
ID = 250 µA VGS = 0
@ 100oC
Zero G ate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating
Tc = 125 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30 V
Min.
600
Typ. Max.
1
50
± 100
Unit
V
µA
µA
nA
ON ()
S ymb ol
V GS(th )
RDS( o n )
ID(o n)
P a ra m et er
Test Conditions
Gate Threshold
Voltage
VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10V ID =6.3 A
Resistance
On St ate Drain Current VDS > ID(on) x RDS(on) max
VGS = 10 V
Min.
3
Typ .
4
Max.
5
Unit
V
0.4 0.45
12.6
A
DYNAMIC
S ymb ol
gfs ()
Ciss
Coss
Crss
P a ra m et er
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max ID =6.3 A
Min.
6
Typ. Max.
9
Unit
S
VDS = 25 V f = 1 MHz VGS = 0
2950
370
33
3840
480
43
pF
pF
pF
2/6


Part Number STU13NB60
Description N-channel Power MOSFET
Maker STMicroelectronics
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STU13NB60 Datasheet PDF






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