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STW10N105K5 Datasheet N-channel Power MOSFET

Manufacturer: STMicroelectronics

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General Description

These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure.

The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Table 1: Device summary Order codes Marking Package Packaging STF10N105K5 STP10N105K5 STW1

Overview

STF10N105K5, STP10N105K5, STW10N105K5 N-channel 1050 V, 1 Ω typ.

Key Features

  • Order codes STF10N105K5 STP10N105K5 STW10N105K5 VDS 1050 V RDS(on) max. ID PTOT 1.3 Ω 30 W 6 A 130 W 130 W 3 12 TO-247 Figure 1: Internal schematic diagram D(2, TAB) G(1) S(3) AM01476v1.
  • Industry’s lowest RDS(on).
  • Industry’s best figure of merit (FoM).
  • Ultra low gate charge.
  • 100% avalanche tested.
  • Zener-protected.

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