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STW26NM60-H - Power MOSFETs

General Description

This series of devices implements second generation MDmesh™ technology.

This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Key Features

  • Type STW26NM60N-H.
  • VDSS 600 V RDS(on) max < 0.165 Ω ID 20 A 100% avalanche tested Low input capacitance and gate charge Low gate input resistance TO-247 1 2 3.

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Full PDF Text Transcription (Reference)

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STW26NM60N-H N-channel 600 V, 0.135 Ω , 20 A TO-247 MDmesh™ II Power MOSFET Features Type STW26NM60N-H ■ ■ ■ VDSS 600 V RDS(on) max < 0.165 Ω ID 20 A 100% avalanche tested Low input capacitance and gate charge Low gate input resistance TO-247 1 2 3 Application ■ Switching applications Description This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. www.DataSheet4U.com Figure 1. Internal schematic diagram $ ' 3 3# Table 1.