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STW4N150 - N-Channel MOSFET

General Description

These Power MOSFETs are designed using the STMicroelectronics consolidated strip-layout-based MESH OVERLAY process.

The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers.

Key Features

  • 100% avalanche tested.
  • Intrinsic capacitances and Qg minimized.
  • High speed switching.
  • Fully isolated TO-3PF plastic package.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STFW4N150, STP4N150, STW4N150 Datasheet N-channel 1500 V, 6 Ω typ., 4 A, PowerMESH Power MOSFET in TO-220, TO-247 and TO-3PF packages 1 TO-3PF 3 2 1 TAB TO-220 1 2 3 3 2 1 TO-247 D(2, TAB) G(1) Features • 100% avalanche tested • Intrinsic capacitances and Qg minimized • High speed switching • Fully isolated TO-3PF plastic package Applications • Switching applications Description These Power MOSFETs are designed using the STMicroelectronics consolidated strip-layout-based MESH OVERLAY process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers.