n-channel power mosfet.
Order code STW56NM60N
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VDSS 600 V
RDS(on) max < 0.06 Ω
ID 45 A
100% avalanche tested Low input capacitance and gate charge Low gate input resistance .
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Description
This device is an N-channel Power MOSFET developed using the second generatio.
This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and g.
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