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SPN11T11 Datasheet Preview

SPN11T11 Datasheet

N-Channel Enhancement Mode MOSFET

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SPN11T11
N-Channel Enhancement Mode MOSFET
DESCRIPTION
APPLICATIONS
The SPN11T11 is the N-Channel logic enhancement mode Powered System
power field effect transistor which is produced using super DC/DC Converter
high cell density DMOS trench technology. The SPN11T11 Load Switch
has been designed specifically to improve the over all
efficiency of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been
optimized for low gate charge, low RDS(ON) and fast
switching speed.
FEATURES
110V/12A, RDS(ON)=108mΩ@VGS=10V
110V/12A, RDS(ON)=137mΩ@VGS=4.5V
High density cell design for extremely low RDS (ON)
Exceptional on-resistance and maximum DC current
capability
TO-252-2L , package design
PIN CONFIGURATION
TO-252-2L
PART MARKING
2018/12/05 Ver 1
Page 1




SYNC POWER

SPN11T11 Datasheet Preview

SPN11T11 Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

SPN11T11
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
1
2
3
Symbol
G
D
S
Description
Gate
Drain
Source
ORDERING INFORMATION
Part Number
Package
SPN11T11T252RGB
TO-252-2L
SPN11T11T252RGB : Tape Reel ; Pb Free ; Halogen - Free
Part Marking
SPN11T11
ABSOULTE MAXIMUM RATINGS
(TA=25℃ Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate Source Voltage
Continuous Drain Current(TJ=150℃)
Pulsed Drain Current
Avalanche Current
Power Dissipation @ TC=25
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
TC=25℃
TC=70℃
Symbol
VDSS
VGSS
ID
IDM
IAS
PD
TJ
TSTG
RθJA
Typical
110
±20
12
8.0
24
14
40
150
-55/150
110
Unit
V
V
A
A
A
W
℃/W
2018/12/05 Ver 1
Page 2


Part Number SPN11T11
Description N-Channel Enhancement Mode MOSFET
Maker SYNC POWER
Total Page 7 Pages
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