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SPN11T11 - N-Channel MOSFET

Description

APPLICATIONS The SPN11T11 is the N-Channel logic enhancement mode Powered System power field effect transistor which is produced using super

DC/DC Converter high cell density DMOS trench technology.

Load Switch has been designed specifically to improve the over all

Features

  • 110V/12A, RDS(ON)=108mΩ@VGS=10V.
  • 110V/12A, RDS(ON)=137mΩ@VGS=4.5V.
  • High density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • TO-252-2L , package design PIN.

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Datasheet Details

Part number SPN11T11
Manufacturer SYNC POWER
File Size 579.82 KB
Description N-Channel MOSFET
Datasheet download datasheet SPN11T11 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SPN11T11 N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS The SPN11T11 is the N-Channel logic enhancement mode  Powered System power field effect transistor which is produced using super  DC/DC Converter high cell density DMOS trench technology. The SPN11T11  Load Switch has been designed specifically to improve the over all efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. FEATURES  110V/12A, RDS(ON)=108mΩ@VGS=10V  110V/12A, RDS(ON)=137mΩ@VGS=4.
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