SPN3632 Description
The SPN3632 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook puter power management and other battery powered circuits where high-side switching.
SPN3632 Key Features
- 100V/80A,RDS(ON)=8.8mΩ@VGS=10V
- 100V/30A,RDS(ON)=13mΩ@VGS=6.0V
- 100V/10A,RDS(ON)=10mΩ@VGS=4.5V
- Super high density cell design for extremely low
- Exceptional on-resistance and maximum DC
- TO-220-3L package design