SPN8668 - N-Channel MOSFET

SYNC POWER

General Description

The SPN8668 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

60V/80A,RDS(ON)=21mΩ@VGS=10V.
60V/80A,RDS(ON)=24mΩ@VGS=4.5V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.
PPAK3x3-8L package design.

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SPN8668 n-channel mosfet by SYNC POWER - Datasheet Preview

Datasheet Details

Part number	SPN8668
Manufacturer	SYNC POWER
File Size	460.68 KB
Description	N-Channel MOSFET
Datasheet	SPN8668 Datasheet

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Full PDF Text Transcription (Reference)

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SPN8668 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8668 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high efficiency and fast switching is required. FEATURES  60V/80A,RDS(ON)=21mΩ@VGS=10V  60V/80A,RDS(ON)=24mΩ@VGS=4.