SPN8842 Datasheet | SYNC POWER

DESCRIPTION The SPN8842 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. The SPN8842 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS - High Frequency Synchronous Buck Converter - DC/DC Power System - Load Switch FEATURES PIN CONFIGURATION(PPAK5x6-8L) - 40V/100A,RDS(ON)=1.7mΩ@VGS=10V - 40V/100A,RDS(ON)=2.6mΩ@VGS=4.5V - Super high density cell design for extremely low RDS(ON) - Exceptional on-resistance and maximum DC current capability - PPAK5x6-8L package design PART MARKING 2022/8/18 Ver 2 Page 1 N-Channel Enhancement Mode MOSFET PPAK5x6-8L PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Description Source Source Source Gate Drain Drain Drain Drain ORDERING INFORMATION Part Number Package SPN8842DN8RGB PPAK5x6-8L ※ SPN8842DN8RGB : Tape Reel ; Pb - Free ; Halogen - Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate - Source Voltage TC=25℃ Continuous Drain Current (Silicon Limited) TC=100℃ Pulsed Drain Current Avalanche Current Single Pulse Avalanche Energy Power...