SPN9926B Description
The SPN9926B is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook puter power management and other battery powered circuits where high-side switching.
SPN9926B Key Features
- 20V/6.0A,RDS(ON)=33mΩ@VGS=4.5V
- 20V/5.0A,RDS(ON)=38mΩ@VGS=2.5V
- Super high density cell design for extremely low
- Exceptional on-resistance and maximum DC
- SOP-8 package design
SPN9926B Applications
- Power Management in Note book