SPP4435 - P-Channel MOSFET

SYNC POWER

General Description

The SPP4435 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

-30V/-9.2A,RDS(ON)= 25mΩ@VGS=- 10V -30V/-7.0A,RDS(ON)= 35mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOP.
8P package design PIN.

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SPP4435 p-channel mosfet by SYNC POWER - Datasheet Preview

Datasheet Details

Part number	SPP4435
Manufacturer	SYNC POWER
File Size	202.71 KB
Description	P-Channel MOSFET
Datasheet	SPP4435 Datasheet

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SPP4435B	P-Channel MOSFET
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SPP4435 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP4435 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . APPLICATIONS z Power Management in Note book z Portable Equipment z Battery Powered System z DC/DC Converter z Load Switch z DSC z LCD Display inverter FEATURES -30V/-9.2A,RDS(ON)= 25mΩ@VGS=- 10V -30V/-7.0A,RDS(ON)= 35mΩ@VGS=-4.