SPP8525 Description
The SPP8525 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits, and low in-line power loss are...
SPP8525 Key Features
- 20V/-7.2 A,RDS(ON)=40mΩ@VGS=-4.5V
- 20V/-5.2 A,RDS(ON)=52mΩ@VGS=-2.5V
- 20V/-3.6 A,RDS(ON)=70mΩ@VGS=-1.8V
- Super high density cell design for extremely low
- Exceptional on-resistance and maximum DC
- PPAK3x2-8L package design
SPP8525 Applications
- Power Management in Note book