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SPP8525 - P-Channel MOSFET

General Description

The SPP8525 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • -20V/-7.2 A,RDS(ON)=40mΩ@VGS=-4.5V.
  • -20V/-5.2 A,RDS(ON)=52mΩ@VGS=-2.5V.
  • -20V/-3.6 A,RDS(ON)=70mΩ@VGS=-1.8V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • PPAK3x2-8L package design.

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Datasheet Details

Part number SPP8525
Manufacturer SYNC POWER
File Size 441.55 KB
Description P-Channel MOSFET
Datasheet download datasheet SPP8525 Datasheet

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Other Datasheets by SYNC POWER

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SPP8525 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP8525 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. FEATURES  -20V/-7.2 A,RDS(ON)=40mΩ@VGS=-4.5V  -20V/-5.2 A,RDS(ON)=52mΩ@VGS=-2.5V  -20V/-3.6 A,RDS(ON)=70mΩ@VGS=-1.