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SamHop Microelectronics

SP2103 Datasheet Preview

SP2103 Datasheet

Dual N-Channel Enhancement Mode Field Effect Transistor

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Green
Product
Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
SP2103
Ver 1.3
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
100V
2.2A
220 @ VGS=10V
350 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
D1 D1 D2 D2
PDFN 5x6
PIN1
S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous a
TA=25°C
TA=70°C
IDM -Pulsed b
EAS Single Pulse Avalanche Energy d
PD
Maximum Power Dissipation a
TA=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JC
R JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Limit
100
±20
2.2
1.8
9
16
2.5
1.6
-55 to 150
5
50
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
1
Jul,18,2013
www.samhop.com.tw




SamHop Microelectronics

SP2103 Datasheet Preview

SP2103 Datasheet

Dual N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

SP2103
Ver 1.3
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=80V , VGS=0V
VGS= ±20V , VDS=0V
100
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS c
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS c
tD(ON)
Turn-On Delay Time
tr
tD(OFF)
Rise Time
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=250uA
VGS=10V , ID=1.1A
VGS=4.5V , ID=0.9A
VDS=10V , ID=1.1A
VDS=25V,VGS=0V
f=1.0MHz
VDD=50V
ID=1A
VGS=10V
RGEN= 6 ohm
VDS=50V,ID=1.1A,VGS=10V
VDS=50V,ID=1.1A,VGS=4.5V
VDS=50V,ID=1.1A,
VGS=10V
1
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=2A
Notes
a.Surface Mounted on FR4 Board,t <_ 10sec.
b.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=0.5mH,VDD = 50V.(See Figure13)
Typ
1.5
185
220
3
453
34
23
9.5
10
18.3
6.5
7.5
4
1
1.9
0.83
Max Units
1
±100
V
uA
nA
1.9 V
220 m ohm
350 m ohm
S
634 pF
48 pF
41 pF
19 ns
20 ns
37 ns
13 ns
10.5 nC
5.6 nC
1.4 nC
2.7 nC
1.2 V
Jul,18,2013
2 www.samhop.com.tw


Part Number SP2103
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Maker SamHop Microelectronics
Total Page 7 Pages
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