SP2108 Datasheet | SamHop Microelectronics

FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. PDFN 5x6 PIN1 D2 5 D2 6 D1 7 D1 8 4 G2 3 S2 2 G1 1 S1 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Symbol VDS VGS IDM EAS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous c -Pulsed a c Single Pulse Avalanche Energy d Maximum Power Dissipation TA=25°C TA=70°C TA=25°C TA=70°C TJ, TSTG Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient Limit 100 ±20 1.2 0.96 5 4 2.5 1.6 -55 to 150 Units V V A A A m J W W °C °C/W Details are subject to change without notice. Sep,11,2014 .samhop..tw Ver 1.0 ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) Symbol Parameter Conditions Min OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current VGS=0V , ID=250u A VDS=80V , VGS=0V VGS= ±20V ,...