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SamHop Microelectronics

SP2108 Datasheet Preview

SP2108 Datasheet

Dual N-Channel MOSFET

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Green
Product
Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
SP2108
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
100V
1.2A
811 @ VGS=10V
932 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
PDFN 5x6
PIN1
D2 5
D2 6
D1 7
D1 8
4 G2
3 S2
2 G1
1 S1
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol
VDS
VGS
ID
IDM
EAS
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous c
-Pulsed a c
Single Pulse Avalanche Energy d
Maximum Power Dissipation
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
Limit
100
±20
1.2
0.96
5
4
2.5
1.6
-55 to 150
50
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
Details are subject to change without notice.
1
Sep,11,2014
www.samhop.com.tw




SamHop Microelectronics

SP2108 Datasheet Preview

SP2108 Datasheet

Dual N-Channel MOSFET

No Preview Available !

SP2108
Ver 1.0
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=80V , VGS=0V
VGS= ±20V , VDS=0V
100
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
SWITCHING CHARACTERISTICS b
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=250uA
VGS=10V , ID=0.6A
VGS=4.5V , ID=0.5A
VDS=10V , ID=0.6A
VDD=50V
ID=0.6A
VGS=10V
RGEN= 6 ohm
VDS=50V,ID=0.6A,VGS=10V
VDS=50V,ID=0.6A,
VGS=10V
1
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=1A
Notes
a.Pulse Test:Pulse Width <_ 10us, Duty Cycle <_ 1%.
b.Guaranteed by design, not subject to production testing.
c.Drain current limited by maximum junction temperature.
d.Starting TJ=25°C,L=0.5mH,VDD = 50V.(See Figure12)
e.Mounted on FR4 Board of 1 inch2 , 2oz.
Typ
1.9
649
690
2.8
54
41
910
149
3.4
0.85
1
0.86
Max Units
V
1 uA
±10 uA
3V
811 m ohm
932 m ohm
S
ns
ns
ns
ns
nC
nC
nC
1.2 V
Sep,11,2014
2 www.samhop.com.tw


Part Number SP2108
Description Dual N-Channel MOSFET
Maker SamHop Microelectronics
Total Page 7 Pages
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