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SamHop Microelectronics

SP8077E Datasheet Preview

SP8077E Datasheet

N-Channel Enhancement Mode Field Effect Transistor

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Product
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
SP8077E
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Typ
4.0 @ VGS=10V
30V 27A
5.0 @ VGS=6V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
Pin 1
TSON 3.3 x 3.3
D5
D6
D7
D8
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous c
TA=25°C
IDM -Pulsed a c
PD
Maximum Power Dissipation
TA=25°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
4G
3S
2S
1S
Limit
30
±20
27
81
1.67
-55 to 150
75
Units
V
V
A
A
W
°C
°C/W
Details are subject to change without notice.
1
Dec,18,2015
www.samhop.com.tw




SamHop Microelectronics

SP8077E Datasheet Preview

SP8077E Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

SP8077E
Ver 1.0
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=10mA
VDS=30V , VGS=0V
VGS= ±20V , VDS=0V
30
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS b
CISS
COSS
CRSS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS b
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=0.3mA
VGS=10V , ID=13.5A
VGS=6V , ID=13.5A
VDS=10V,VGS=0V
f=1.0MHz
VDD=15V
ID=13.5A
VGS=10V
RGEN= 4.7 ohm
VDS=24V,ID=13.5A,VGS=10V
VDS=24V,ID=13.5A,
VGS=10V
1.3
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=27A
Notes
a.Pulse Test:Pulse Width <_ 10us, Duty Cycle <_ 1%.
b.Guaranteed by design, not subject to production testing.
c.Drain current limited by maximum junction temperature.
d.Mounted on FR4 Board of 1 inch2 , 2oz.
Typ
1.8
4.0
5.0
1660
498
456
35
63
61
46
34
6
9.5
0.84
Max Units
V
10 uA
±10 uA
2.3 V
4.6 m ohm
6.2 m ohm
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
1.3 V
Dec,18,2015
2 www.samhop.com.tw


Part Number SP8077E
Description N-Channel Enhancement Mode Field Effect Transistor
Maker SamHop Microelectronics
Total Page 8 Pages
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