* Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. S O-8 1 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous c IDM -Pulsed a c TC=25°C TC=70°C EAS Sing
STM132N
SamHop Microelectronics
113.28 KB
N-channel logic level enhancement mode field effect transistor.
STM132NGreen Product SamHop Microelectronics Corp. N-Channel Logic Level Enhancement Mode Field Effect Transistor Ver 1.0 PRODUCT SUMMARY VDSS ID.
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